linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201127 05/01/2014 rev#a6 ecn# ls830 LS831 ls832 ls833 features ultra low drift v gs1 - 2 / t= 5 v/oc max . ultra low noise i g =80fa typ. low noise e n =70 nv/ hz typ. low capacitance c iss =3pf max . absolute maximum ratings note 1 @ 25 c (unless otherwise noted ) maximum temperatures storage temperature - 55 to +150c operating junction temperature - 55 to +150c maximum voltage and current for each transistor note 1 - v gss gate voltage to drain or source 4 0v - v dso drain to source voltage 4 0v - i g(f) gate forward current 10m a - i g gate reverse current 10 a maximum power dissipation @ ta = 25 oc continuous power dissipation ( total ) 500mw symbol characteristic min. typ. max. units conditions bv gss breakdown voltage - 4 0 - 60 -- v v ds = 0 i g = - 1 na bv g go gate - to - gate breakdown 4 0 -- -- v i g = 1 a i d = 0 i s = 0 transconductance g f ss full conduction 70 300 5 00 s v dg = 10v v gs = 0 f = 1khz g f s typical operation 5 0 100 2 00 s v dg = 10 v i d = 3 0a f = 1khz g fs 1 - 2 / g fs differential -- 1 5 % drain current i dss full conducti on 60 400 10 00 a v dg = 10v v gs = 0 i dss1 - 2 /i dss differential at full conduction -- 2 5 % electrical characteristics ta = 25oc (unless otherwise noted) symbol characteristic ls830 LS831 ls832 ls833 units conditions v gs1 - 2 / t max. drift vs. temperat ure 5 10 20 75 v/oc v dg = 10v i d = 30a t a = - 55oc to +125oc v gs1 - 2 max. offset voltage 25 25 25 25 mv v dg = 10v i d = 3 0a - i g typical operating 0.1 0.1 0.1 0.5 pa - i g typical high temperature 0.1 0.1 0.1 0.5 na ta= +125oc i gss typical at f ull conduction 0.2 0.2 0.2 1.0 pa v gs = 20v, v gs = 0v i gss typical high temperature 0.5 0.5 0.5 1.0 na v gs = 0 v gs = 20v ta= +125oc ls830 LS831 ls832 ls833 ultra low leakage low drift monolithic dual n - channel jfet amplifier top view soic top view to - 71 & to - 78
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 201127 05/01/2014 rev#a6 ecn# ls830 LS831 ls832 ls833 symbol characteristic min. typ. max. units conditions gate - source v gs (off) cutoff voltage - 0.6 - 2 - 4.5 v v ds = 10v i d = 1na v gs operating range -- -- - 4 v v dg = 10v i d = 30a gate current i ggo gate - to - gate leakage -- 1 -- pa v gg = 20v i d = i s = 0a output conductance g oss full conduction -- -- 5 s v dg = 10v v gs = 0 g os operating -- -- 0.5 s v dg = 10v i d = 30a g os 1 - 2 differential -- -- 0.1 s common mode rejection cmrr - 20 log v gs1 - 2 / v ds -- 90 -- db v ds = 10 to 20v i d =30a cmrr - 20 log v gs1 - 2 / v ds -- 90 -- db v ds = 5 to 10v i d =30a noise nf figure - - -- 1 db v ds = 10v v gs = 0 r g =10m? f= 100hz nbw= 6hz e n voltage -- 20 70 nv/hz v dg = 10v i d = 30a f= 10hz nbw= 1hz capacitance c iss input -- -- 3 pf v ds = 10v v gs = 0 f= 1m hz c rss reverse transfer -- -- 1.5 pf v ds = 10v v gs = 0 f= 1m hz c dd drain - to - drain -- -- 0.1 pf v dg = 10v i d = 30a l inear integrated systems (lis) is a 25 - year - old, third - generation precision semiconductor company providing high - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by company president john h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice president of r&d at intersil, and founder/president of micro power systems. notes: 1. these ratings are limi ting values above which the serviceability of any semiconductor may be impaired information furnished by linear integrated systems is believed to be accurate and reliable. however, no responsibility is ass umed for its use; nor for any infringement of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. 0.210 0.170 note: all dimensions in inches to - 71 to - 78 p - dip soic
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